Advanced FIB & TEM For Wafers Analysis

Advanced FIB & TEM For Wafers Analysis
Details:
Advanced process wafer-level FIB sample preparation and TEM analysis services provide precise sample preparation and structural analysis solutions for advanced process chips by performing FIB sample preparation at specified locations of nanomaterials and combining it with transmission electron microscopy (TEM) technology.
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Description
Technical Parameters

Service Content

 

Advanced Process Chip Analysis

 

Service Scope

 

Comprehensive analysis of the metal layers, M0 layers, FinFET structures, etc., of 7nm and below advanced process chips manufactured and designed by chip manufacturing and design companies. This analysis is used to verify the stability of advanced process technologies and key process nodes, and can also be used for competitor analysis and reverse engineering.

 

Service Background

 

As integrated circuit manufacturing processes continue to improve, the numbers representing key process nodes are getting smaller and smaller, such as from 65nm and 40nm processes to 22nm, 14nm, 7nm, 4nm, and 3nm processes. Smaller node numbers indicate more advanced processes, meaning better crystal management integration, faster processing speeds, and lower power consumption; however, it also means increased complexity of the chip's internal structure, smaller key structural dimensions, and a gradual development towards nanoscale dimensions that cannot be observed by general microscopic imaging techniques (such as optical microscopes).

Because TEM samples need to be very thin for electrons to penetrate and form diffraction patterns, FIB's efficient sputtering allows for fine processing of samples; therefore, FIB is often used for optimizing the preparation of ultrathin TEM samples.

 

Our Advantages

 

GRGTEST Metrology possesses patented technologies including methods for eliminating the curtain effect of the FIB focused ion beam, a novel framework structure method for preparing heat-sensitive TEM ultrathin samples using DB FIB, a FIB step-thinning method for preparing ultrathin TEM samples of brittle and easily cracked materials, a focused ion beam ultrathin sectioning pretreatment method for radiation-sensitive fine-structure wafer samples, and a method for preparing TEM samples using FIB inverted cutting. These technologies enable high-resolution TEM images with no electron beam damage, achieving atomic-level resolution morphological characterization and compositional analysis of advanced process chips.

 

Case Study

 

Chip FA Analysis - 3D TEM Method

 

product-3200-1800

 

 

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