PFIB (Plasma Focused Ion Beam)

PFIB (Plasma Focused Ion Beam)
Details:
Compared to traditional gallium-ion focused ion beam (Ga-FIB), PFIB utilizes a more powerful xenon (Xe) ion beam, achieving a maximum current of 2.5 μA at 30 keV energy, which increases its etching rate by approximately 50 times. Therefore, PFIB is particularly suitable for processing large-size (>100 μm) cross-sections. PFIB can solve problems that traditional Ga-FIB cannot address, including Ga+-free TEM sample preparation, flip-chip package-level failure analysis, large-field analysis of porous materials, and large-volume 3D reconstruction, demonstrating broad application prospects in the semiconductor and materials analysis fields.
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Description
Technical Parameters

Service Content

 

Test Item

Quotation Unit

Sample Type

Cross-section Processing & Metrology

Hour (h)

Semiconductor samples such as 3D NAND, DRAM, MEMS; other samples requiring large-size (>50µm) processing

Large-size TEM XS (Cross-section) Sample Preparation

Hour (h)

Same as above

Large-size TEM PV (Plan-view) Sample Preparation

Hour (h)

Same as above

Microfabrication (Etching or Deposition)

Hour (h)

Same as above

Delayering Analysis (Delayer)

Hour (h)

Hotspot sample delayering analysis

 

Service Scope

 

See service details, sample types

 

Testing Items

 

See service details, testing items

 

Testing Cycle

 

The standard testing cycle is 3 calendar days. For special requirements, we can provide quotations for different response times: 48h, 24h, and 12h.

 

Our Advantages

 

Our team members at GRGTEST Metrology Platform have an average of over 5 years of practical experience in electron microscopy, enabling us to provide accurate, fast, and professional testing services.

Our new generation PFIB microscope tubes can achieve the highest throughput and highest quality cross-section processing and micromachining.

Combined with a final polishing at 500V, we can achieve the highest quality Ga+-free TEM sample preparation.

 

 

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