PRODUCT DESCRIPTION
As technology has advanced at a breathless pace, all kinds of semiconductor power devices have now gone into a stage of commercial application from the laboratory stage. This is especially true for the third generation semiconductor devices represented by SiC-- they have accelerated the process of localization. However, the market for automotive discrete devices has been controlled by foreign giants, leaving it difficult for domestic devices to get a slice of the action. And one of the main reasons for such phenomenon is that reliability of our products is not well recognized.
Test Cycle
2-3 months, during which comprehensive certification plan, testing and other services will be provided
Product Scope
Semiconductor discrete devices such as diode, triode, transistor, MOS, IBGT, TVS tube, Zener and thyratron
Test Items
|
S/N |
Test Item |
Abbreviation |
Sample Number/Batch |
Batch Number |
Test Method |
| 1 | Pre- and Post-Stress Electrical and Photometric Test | TEST |
Test before and after all stress tests |
User specifications or supplier's standard specifications |
|
| 2 | Pre-conditioning | PC |
Pre-treat SMD products before tests 7, 8, 9 and 10 |
JESD22-A113 | |
| 3 | External Visual | EV |
Test before and after each test |
JESD22-B101 | |
| 4 | Parametric Verification | PV | 25 | 3 Note A |
User specifications |
| 5 | High Temperature Reverse Bias |
HTRB | 77 | 3 Note B | MIL-STD-750-1 M1038 Method A |
| 5a | AC blocking voltage |
ACBV | 77 | 3 Note B | MIL-STD-750-1 M1040 Test Condition A |
| 5b | High Temperature Forward Bias |
HTFB | 77 | 3 Note B | JESD22 A-108 |
| 5c | Steady State Operational |
SSOP | 77 | 3 Note B | MIL-STD-750-1 M1038 Condition B(Zeners) |
| 6 | High Temperature Gate Bias |
HTGB | 77 | 3 Note B | JESD22 A-108 |
| 7 | Temperature Cycling |
TC | 77 | 3 Note B | JESD22 A-104 Appendix 6 |
| 7a | Temperature Cycling Hot Test |
TCHT | 77 | 3 Note B | JESD22 A-104 Appendix 6 |
| 7a alt |
TC Delamination Test |
TCDT | 77 | 3 Note B | JESD22 A-104 Appendix 6 J-STD-035 |
| 7b | Wire Bond Integrity | WBI | 5 | 3 Note B | MIL-STD-750 Method 2037 |
| 8 | Unbiased Highly Accelerated Stress Test |
UHAST | 77 | 3 Note B | JESD22 A-118 |
| 8 alt |
Autoclave | AC | 77 | 3 Note B | JESD22 A-102 |
| 9 | Highly Accelerated Stress Test |
HAST | 77 | 3 Note B | JESD22 A-110 |
| 9 alt |
High Humidity High Temp. Reverse Bias |
H3TRB | 77 | 3 Note B | JESD22 A-101 |
| 10 | Intermittent Operational Life |
IOL | 77 | 3 Note B | MIL-STD-750 Method 1037 |
| 10 alt |
Power and Temperature Cycle |
PTC | 77 | 3 Note B | JESD22 A-105 |
| 11 | ESD Characterization |
ESD | 30 HBM | 1 | AEC-Q101-001 |
| 30 CDM | 1 | AEC-Q101-005 | |||
| 12 | Destructive Physical Analysis |
DPA | 2 | 1 NoteB | AEC-Q101-004 Section 4 |
| 13 | Physical Dimension |
PD | 30 | 1 | JESD22 B-100 |
| 14 | Terminal Strength | TS | 30 | 1 | MIL-STD-750 Method 2036 |
| 15 | Resistance to Solvents |
RTS | 30 | 1 | JESD22 B-107 |
| 16 | Constant Acceleration | CA | 30 | 1 | MIL-STD-750 Method 2006 |
| 17 | Vibration Variable Frequency |
VVF |
Items 16 to 19 are sequential tests of sealed packages. (See Note H on the Legend page.) |
JEDEC JESD22-B103 |
|
| 18 | Mechanical Shock |
MS | JEDEC JESD22-B104 |
||
| 19 | Hermeticity | HER | JESD22-A109 | ||
| 20 | Resistance to Solder Heat |
RSH | 30 | 1 | JESD22 A-111 (SMD) B-106 (PTH) |
| 21 | Solderability | SD | 10 | 1 Note B | J-STD-002 JESD22B102 |
| 22 | Thermal Resistance |
TR | 10 | 1 | JESD24-3,24-4,26-6 Depend on the situation |
| 23 | Wire Bond Strength |
WBS |
10 solder wires for a minimum of 5 devices |
1 | MIL-STD-750 Method 2037 |
| 24 | Bond Shear | BS | 10 solder wires for a minimum of 5 devices | 1 | AEC-Q101-003 |
| 25 | Die Shear | DS | 5 | 1 | MIL-STD-750 |
| Method 2017 | |||||
| 26 | Unclamped Inductive Switching |
UIS | 5 | 1 | AEC-Q101-004 Section 2 |
| 27 | Dielectric Integrity | DI | 5 | 1 | AEC-Q101-004 Section 3 |
| 28 | Short Circuit Reliability Characterization |
SCR | 10 | 3 Note B | AEC-Q101-006 |
| 29 | Lead Free | LF | AEC-Q005 | ||
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