DDR devices, namely double data rate synchronous dynamic random access memory, are an indispensable key component in modern electronic devices. DDR devices are widely used in computers, servers, communication equipment and low power consumption, with their high speed, large capacity and consumer electronics. With the rapid development of science and technology, DDR devices are constantly updated, and the performance requirements are also constantly improved. Its electric parameter test has become a key link to ensure the product quality and stable performance.
Electrical performance parameters, as the core description of the behavior characteristics of DDR devices in the circuit, reflect the integrated performance of the device in different working states.The electrical performance parameters of DDR devices mainly include key elements such as working current, clock frequency, data transmission rate and delay time. These parameters play a decisive role on the performance of the DDR devices.
Specifically, the size of working current is directly related to the application environment and power consumption level of DDR device; the clock frequency and data transmission rate jointly determine the data processing capacity of DDR device; and the delay time is a factor that affects the response speed and overall performance of the system.
Notably, there showed significant differences in electrical performance parameters and working conditions. To gain an insight into these differences, we can refer to the relevant device manuals. For example, the following figure shows the title page of a DDR device specification. Detailed electrical performance parameters and working conditions information can be obtained from the specification book. This information is crucial for the correct selection and application of the DDR devices.
Main test equipment
V93000-CTH
Equipment features:
1. V93000-CTH is an advanced super-scale integrated circuit automation test system, designed for the testing of digital logic chip, hybrid signal chip, on-chip system SoC chip and other products, with a wide range of tests.
2. Adopt the advanced Smartest software platform to provide users with powerful programming and testing functions, making the development of test programs more rapid and efficient.
3. Platform In terms of the number of digital test channels, V93000-CTH has excellent scalability, which can expand from 128 channels to 2048 channels (with 128 channels as the minimum expansion unit).
4. The system supports a variety of test speeds, and the matching PS 9G board card can provide a test rate of up to 9 Gbps. In addition, the device also supports a variety of test speed of digital channel card mixing, so as to meet different test requirements.
5. Efficient test efficiency: V93000-CTH has excellent test speed. Compared with the traditional test equipment, it can complete the test tasks faster, thus improving the test efficiency.
Test case
Among the various electrical parameters of the DDR, The critical DC parameters included IDD 0, IDD 1 (Operating one bank Current), IDD2(Precharge Current), IDD3(Active Current), IDD4(Operating burst write/read current), IDD5, IDD6(Refresh Current), IDD 7 (Operating bank interleave read current) and IDD 8 (Reset Current), etc., Of which the smallest operating current is usually less than ten mA, The maximum working current can reach a few hundred milliamps.
The key AC parameters are tCK (System Clock), tAC (DQ output access time to / from CK / CK #), tDQSCK (DQS / DQS # rising to / from rising CK / CK #), etc., the system clock is usually nanosecond parameter, and the key parameters such as tDQSCK are picosecond delay parameter.
The following group is the schematic diagram of GRGTEST testing a certain DDR device. The appropriate test board and test fixture are tested with the appropriate configured ATE platform.
On the left, the test data of key parameters of a DDR device is completed by V93000-CTH; on the right of the right is the list of electrical characteristic parameters in the specification of the company of the same model.
Test capability
GRGTEST Introduce advanced test technology and equipment at home and abroad, and build the test and development capability of key parameters related to DDR devices. In addition, GRGTEST is also committed to the development of diversified devices such as digital logic chip, hybrid signal chip and system SoC chip, which provides a strong verification guarantee for the diversified development of China's chip industry and escorts the smooth launch of chip products.